Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories
In this study, the bipolar switching properties and electrical conduction behaviors of the ITO thin films RRAM devices were investigated. For the transparent RRAM devices structure, indium tin oxide thin films were deposited by using the RF magnetron sputtering method on the ITO/glass substrate. For...
Guardat en:
| Autors principals: | , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2023-02-01
|
| Col·lecció: | Nanomaterials |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2079-4991/13/4/688 |
| Etiquetes: |
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|