First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices

In the reset state, the decay reaction mechanism and bipolar switching properties of vanadium oxide thin film RRAM devices for LRS/HRS are investigated and discussed here. To discover the properties of <i>I-V</i> switching curves, the first order rate law behaviors of the reset state between the res...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	Kai-Huang Chen, Chien-Min Cheng, Na-Fu Wang, Hsiao-Wen Hung, Cheng-Ying Li, Sean Wu
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2023-01-01
Schriftenreihe:	Nanomaterials
Schlagworte:	RRAM vanadium oxide decay reaction rate constant
Online-Zugang:	https://www.mdpi.com/2079-4991/13/1/198
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