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A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance

We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition and thickness of the AlGaN layers. To improve the photoelectric response of the narrow-band PDs, a polarization electric field with the same dir...

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Kaydedildi:
Asıl Yazarlar: Qianyu Hou, Haifan You, Qing Cai, Hui Guo, Pengfei Shao, Danfeng Pan, Le Yu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: IEEE 2021-01-01
Seri Bilgileri:IEEE Photonics Journal
Konular:
AlGaN
narrow-band
photodiodes
polarization
responsivity
quantum efficiency
Online Erişim:https://ieeexplore.ieee.org/document/9447915/
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