An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes

To enhance the impact ionization coefficient of holes, we proposed an improved solar-blind AlGaN avalanche photodiode (APD) structure by using a low-Al-composition AlGaN multiplication layer and a filter based on periodic photonic crystal together with a composition graded interlayer between separat...

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Detalles Bibliográficos

Principais autores:	Qing Cai, Mei Ge, Junjun Xue, Liqun Hu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Formato:	Artigo
Idioma:	Inglês
Publicado:	IEEE 2017-01-01
Series:	IEEE Photonics Journal
Assuntos:	AlGaN alloys avalanche photodiodes solar blind composition graded interlayer.
Acceso en liña:	https://ieeexplore.ieee.org/document/7973092/
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