InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs
While InGaAs absorption material has been used for various applications up to 1.6-μm wavelength, specific designs for low-level detection have become of main interest using high responsivity and low-dark-current detectors. By adding an avalanche multiplication layer to form an avalanche photo...
Na minha lista:
| Principais autores: | , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2010-01-01
|
| coleção: | IEEE Photonics Journal |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/5462932/ |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|