An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown
Dark current and avalanche gain M on AlAs<sub>0.56</sub>Sb<sub>0.44</sub> (hereafter referred to as AlAsSb) separate absorption multiplication (SAM) avalanche photodiodes (APDs) were measured at temperatures ranging from 77 K to 300 K. To avoid possible ambiguity in breakdown voltage due to edge bre...
Bewaard in:
| Hoofdauteurs: | , , |
|---|---|
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
IEEE
2013-01-01
|
| Reeks: | IEEE Photonics Journal |
| Onderwerpen: | |
| Online toegang: | https://ieeexplore.ieee.org/document/6557436/ |
| Tags: |
Geen labels, Wees de eerste die dit record labelt!
|