Oscillations in GaN Diode with 2D-h-BN – Layer

In this research, we have investigated the operation of a hybrid 2D-3D heterostructure diode in the Gunn-like oscillation mode. The diode is represented as a GaN-based structure containing n-type channel on a sapphire substrate with the hexagonal boron nitride (h-BN) monolayer on the top. The simula...

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Bibliografiske detaljer

Principais autores:	V.O. Zozulia, O.V. Botsula, Y.S. Khodachok, K.H. Prykhodko, L.V. Sichevska
Format:	Artigo
Sprog:	Inglês
Udgivet:	Sumy State University 2026-02-01
Serier:	Журнал нано- та електронної фізики
Fag:	monolayer gan heterostructure substrate temperature electric field strength self-heating effect impact ionization oscillation oscillation efficiency frequency range
Online adgang:	https://jnep.sumdu.edu.ua/en/component/content/full_article/4269
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