Enhanced THz Emission and Exciton Transfer in Monolayer MoS2/GaAs Heterostructures
For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this fundamental trade‐off, this study presents a novel approach by integ...
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| Hauptverfasser: | , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Wiley-VCH
2026-01-01
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| Schriftenreihe: | Advanced Photonics Research |
| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.1002/adpr.202500153 |
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