Código QR (código de barras bidimensional)

Oscillations in GaN Diode with 2D-h-BN – Layer

In this research, we have investigated the operation of a hybrid 2D-3D heterostructure diode in the Gunn-like oscillation mode. The diode is represented as a GaN-based structure containing n-type channel on a sapphire substrate with the hexagonal boron nitride (h-BN) monolayer on the top. The simula...

תיאור מלא

שמור ב:
Principais autores: V.O. Zozulia, O.V. Botsula, Y.S. Khodachok, K.H. Prykhodko, L.V. Sichevska
פורמט: Artigo
שפה:Inglês
יצא לאור: Sumy State University 2026-02-01
סדרה:Журнал нано- та електронної фізики
נושאים:
monolayer
gan
heterostructure
substrate
temperature
electric field strength
self-heating effect
impact ionization
oscillation
oscillation efficiency
frequency range
גישה מקוונת:https://jnep.sumdu.edu.ua/en/component/content/full_article/4269
תגים: הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!

פריטים דומים