Enhancing the Performance of MoS<sub>2</sub> Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance
Field-effect transistors (FETs) based on two-dimensional molybdenum disulfide (2D-MoS<sub>2</sub>) have great potential in electronic and optoelectronic applications, but the performances of these devices still face challenges such as scattering at the contact interface, which results in reduced mob...
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| Hoofdauteurs: | , , , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
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MDPI AG
2024-08-01
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| Reeks: | Molecules |
| Onderwerpen: | |
| Online toegang: | https://www.mdpi.com/1420-3049/29/17/3988 |
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