Enhancing the Performance of MoS<sub>2</sub> Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance
Field-effect transistors (FETs) based on two-dimensional molybdenum disulfide (2D-MoS<sub>2</sub>) have great potential in electronic and optoelectronic applications, but the performances of these devices still face challenges such as scattering at the contact interface, which results in reduced mob...
محفوظ في:
| المؤلفون الرئيسيون: | , , , , |
|---|---|
| التنسيق: | Artigo |
| اللغة: | Inglês |
| منشور في: |
MDPI AG
2024-08-01
|
| سلاسل: | Molecules |
| الموضوعات: | |
| الوصول للمادة أونلاين: | https://www.mdpi.com/1420-3049/29/17/3988 |
| الوسوم: |
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|