Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
Abstract An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN interface, respectively. At the off-st...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
SpringerOpen
2020-07-01
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| Edice: | Nanoscale Research Letters |
| Témata: | |
| On-line přístup: | http://link.springer.com/article/10.1186/s11671-020-03376-z |
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