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Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

Abstract An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN interface, respectively. At the off-st...

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Principais autores: Tao Sun, Xiaorong Luo, Jie Wei, Chao Yang, Bo Zhang
Format: Artigo
Sprog:Inglês
Udgivet: SpringerOpen 2020-07-01
Serier:Nanoscale Research Letters
Fag:
GaN
Schottky barrier diode (SBD)
Breakdown voltage
Silicon substrate
Online adgang:http://link.springer.com/article/10.1186/s11671-020-03376-z
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