A Novel Silicon on Diamond Structure to Improve Drain Induced Barrier Lowering
A silicon on diamond structure to improve DIBL is presented. The electrical field penetration through the buried insulator of diamond degrades the DIBL. In the new structure, a second, double insulating material, e.g. SiO2 is added on top of the buried insulator and partially covers the diamond. The...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
OICC Press
2024-02-01
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| Series: | Majlesi Journal of Electrical Engineering |
| Assuntos: | |
| Acceso en liña: | https://oiccpress.com/mjee/article/view/5234 |
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