Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation
Abstract The AlOx-based resistive switching memory device is fabricated by an oxidation diffusion process that involves depositing an Al film on an ITO substrate and annealing at 400 °C in a vacuum. An AlOx interface layer with a thickness of ~ 20 nm is formed as a resistance switching layer. Bipola...
Kaydedildi:
| Asıl Yazarlar: | , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
SpringerOpen
2020-01-01
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| Seri Bilgileri: | Nanoscale Research Letters |
| Konular: | |
| Online Erişim: | https://doi.org/10.1186/s11671-019-3229-y |
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