Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric Hafnia
Abstract The discovery of nanoscale ferroelectricity in hafnia (HfO2) has paved the way for next generation high‐density, non‐volatile devices. Although the surface conditions of nanoscale HfO2 present one of the fundamental mechanism origins, the impact of external environment on HfO2 ferroelectric...
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| Autors principals: | , , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley
2024-12-01
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| Col·lecció: | Advanced Science |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1002/advs.202410354 |
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