Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation
Abstract The AlOx-based resistive switching memory device is fabricated by an oxidation diffusion process that involves depositing an Al film on an ITO substrate and annealing at 400 °C in a vacuum. An AlOx interface layer with a thickness of ~ 20 nm is formed as a resistance switching layer. Bipola...
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| Principais autores: | , , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
SpringerOpen
2020-01-01
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| Serier: | Nanoscale Research Letters |
| Fag: | |
| Online adgang: | https://doi.org/10.1186/s11671-019-3229-y |
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