Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate

We demonstrate that exposure to positive gate bias can favor a fast recovery of the threshold voltage variation induced by off-state stress, in p-GaN gate high electron mobility transistors. Two process splits were investigated, having different Schottky barriers at the metal/p-GaN junction. Results...

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Autori principali:	D. Favero, C. De Santi, A. Nardo, A. Dixit, P. Vanmeerbeek, A. Stockman, M. Tack, G. Meneghesso, E. Zanoni, M. Meneghini
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	IOP Publishing 2024-01-01
Serie:	Applied Physics Express
Soggetti:	p-GaN gate HEMTs threshold voltage instabilities gate leakage current Schottky barrier height hole injection
Accesso online:	https://doi.org/10.35848/1882-0786/ad7f20
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