Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique
Improved p -GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching. The OCT compensates for the Mg acceptors near the p -GaN surface, leading to an extended depletion region under...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
IOP Publishing
2024-01-01
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| Series: | Applied Physics Express |
| Assuntos: | |
| Acceso en liña: | https://doi.org/10.35848/1882-0786/ad4088 |
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