Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique
Improved p -GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching. The OCT compensates for the Mg acceptors near the p -GaN surface, leading to an extended depletion region under...
Sparad:
| Huvudupphov: | , , , |
|---|---|
| Materialtyp: | Artigo |
| Språk: | Inglês |
| Utgiven: |
IOP Publishing
2024-01-01
|
| Serie: | Applied Physics Express |
| Ämnen: | |
| Länkar: | https://doi.org/10.35848/1882-0786/ad4088 |
| Taggar: |
Inga taggar, Lägg till första taggen!
|