Peculiarity of plasmachemical etching of silicon plate edges of photoelectric converters
Results of technological researches of plasmachemical reactor (PCR) for etching of silicon plate edges of photo-electric converters are described. Dependences of silicon etching speed on a discharge current, magnetic field intensity, quantity of the process able surface area and gases composition ar...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Politekhperiodika
2009-12-01
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| Col·lecció: | Технологія та конструювання в електронній апаратурі |
| Matèries: | |
| Accés en línia: | https://tkea.com.ua/index.php/journal/article/view/626 |
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