An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications
This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. Modifications to the standard ASM-HEMT were developed to accurately capture the DC and RF measurements collected at varying chuck temperatures. Several results are reported which validate the model i...
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| Автори: | , , , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
IEEE
2023-01-01
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| Серія: | IEEE Journal of the Electron Devices Society |
| Предмети: | |
| Онлайн доступ: | https://ieeexplore.ieee.org/document/10268042/ |
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