An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications

This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. Modifications to the standard ASM-HEMT were developed to accurately capture the DC and RF measurements collected at varying chuck temperatures. Several results are reported which validate the model i...

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Auteurs principaux:	Nicholas C. Miller, Alexis Brown, Michael Elliott, Ryan Gilbert, Devin T. Davis, Ahmad E. Islam, Dennis Walker, Gary Hughes, Kyle Liddy, Kelson D. Chabak
Format:	Artigo
Langue:	Inglês
Publié:	IEEE 2023-01-01
Collection:	IEEE Journal of the Electron Devices Society
Sujets:	Gallium nitride high electron mobility transistor high temperature ASM-HEMT load pull
Accès en ligne:	https://ieeexplore.ieee.org/document/10268042/
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