Linear Potentiation in Filamentary Valence Change Mechanism With Sub-100 ps Pulses

Redox-based resistive random access memory (ReRAM) has emerged as a promising technology for next-generation non-volatile memory and neuromorphic computing applications. Among the various ReRAM types, valence change mechanism (VCM) based devices have gained significant attention due to their fast sw...

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Autors principals:	Faisal Munir, Jari Klinkmann, Pascal Stasner, Siyuan Jia, Rainer Waser, Stefan Wiefels
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2025-01-01
Col·lecció:	IEEE Access
Matèries:	Redox-based resistive random access memory (ReRAM) valence change mechanism (VCM) coplanar waveguide ultra-fast pulses linear transition gradual switching
Accés en línia:	https://ieeexplore.ieee.org/document/11075674/
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