Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (<1 µm) GaN buffer layers on silicon (111) substrates exhibiting very high threading dislocation (TD) densities. Despite this high defect density, we show that QW emission efficiency significantly increas...

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Autors principals:	Pierre Lottigier, Davide Maria Di Paola, Duncan T. L. Alexander, Thomas F. K. Weatherley, Pablo Sáenz de Santa María Modroño, Danxuan Chen, Gwénolé Jacopin, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2023-09-01
Col·lecció:	Nanomaterials
Matèries:	quantum well point defect threading dislocation photoluminescence cathodoluminescence electron microscopy
Accés en línia:	https://www.mdpi.com/2079-4991/13/18/2569
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