Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (<1 µm) GaN buffer layers on silicon (111) substrates exhibiting very high threading dislocation (TD) densities. Despite this high defect density, we show that QW emission efficiency significantly increas...

Full description

Bibliographic Details

Main Authors:	Pierre Lottigier, Davide Maria Di Paola, Duncan T. L. Alexander, Thomas F. K. Weatherley, Pablo Sáenz de Santa María Modroño, Danxuan Chen, Gwénolé Jacopin, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean
Format:	Artigo
Language:	Inglês
Published:	MDPI AG 2023-09-01
Series:	Nanomaterials
Subjects:	quantum well point defect threading dislocation photoluminescence cathodoluminescence electron microscopy
Online Access:	https://www.mdpi.com/2079-4991/13/18/2569
Tags:	Add Tag No Tags, Be the first to tag this record!