GaN and InGaN nanowires prepared by metal-assisted electroless etching: Experimental and theoretical studies
We investigate the optical and structural properties of GaN and InGaN nanowires (NWs) fabricated by metal-assisted electroless etching in a hydrofluoric acid (HF) solution. The emission spectra of GaN and InGaN NWs exhibit a red shift compared to the as-grown samples resulting from an increase in th...
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| Auteurs principaux: | , , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Elsevier
2020-12-01
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| Collection: | Results in Physics |
| Sujets: | |
| Accès en ligne: | http://www.sciencedirect.com/science/article/pii/S2211379720318945 |
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