Nano-indentation study of dislocation evolution in GaN-based laser diodes
Abstract The slip systems and motion behavior of dislocations induced by nano-indentation technique in GaN-based LDs were investigated. Dislocations with burgers vector of b = 1/3 <11 $$\overline{2}$$ 2 ¯ 3> were introduced on either {11 $$\overline{2}$$ 2 ¯ 2} <11 $$\overline{2}$$ 2 ¯ 3>, or {1 $$\...
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| Autors principals: | , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2024-03-01
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| Col·lecció: | Discover Nano |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1186/s11671-024-03983-0 |
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