Novel super stack passivation in AlGaN/GaN HEMT for power electronic applications
A super-stack passivation technique is proposed for an AlGaN/GaN HEMT in order to improve the breakdown voltage and cutoff frequency. The performance of the proposed technique is benchmarked against a conventional GaN HEMT. The analysis and investigation are carried out using Technology Computer-Aid...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IOP Publishing
2024-01-01
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| Col·lecció: | Materials Research Express |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1088/2053-1591/ad8861 |
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