Novel super stack passivation in AlGaN/GaN HEMT for power electronic applications

A super-stack passivation technique is proposed for an AlGaN/GaN HEMT in order to improve the breakdown voltage and cutoff frequency. The performance of the proposed technique is benchmarked against a conventional GaN HEMT. The analysis and investigation are carried out using Technology Computer-Aid...

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Detalles Bibliográficos

Autores principales:	A Arunraja, K Suresh, S Senthilnathan
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	IOP Publishing 2024-01-01
Colección:	Materials Research Express
Materias:	AlGaN/GaN interface Johnson figure of merit surface passivation current collapse
Acceso en línea:	https://doi.org/10.1088/2053-1591/ad8861
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