Código QR (código de barras bidimensional)

Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities

The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activ...

Fuld beskrivelse

Na minha lista:
Principais autores: Grzegorz Głuszko, Lidia Łukasiak, Valeriya Kilchytska, Tsung Ming Chung, Benoit Olbrechts, Denis Flandre, Jean-Pierre Raskin
Format: Artigo
Sprog:Inglês
Udgivet: National Institute of Telecommunications 2023-06-01
Serier:Journal of Telecommunications and Information Technology
Fag:
charge-pumping
electrical characterization
interface traps
SOI
wafer bonding
Si layer transfer
Online adgang:https://jtit.pl/jtit/article/view/831
Tags: Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!

Lignende værker