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Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities

The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activ...

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Hoofdauteurs: Grzegorz Głuszko, Lidia Łukasiak, Valeriya Kilchytska, Tsung Ming Chung, Benoit Olbrechts, Denis Flandre, Jean-Pierre Raskin
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: National Institute of Telecommunications 2023-06-01
Reeks:Journal of Telecommunications and Information Technology
Onderwerpen:
charge-pumping
electrical characterization
interface traps
SOI
wafer bonding
Si layer transfer
Online toegang:https://jtit.pl/jtit/article/view/831
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