Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities

The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activ...

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Autors principals:	Grzegorz Głuszko, Lidia Łukasiak, Valeriya Kilchytska, Tsung Ming Chung, Benoit Olbrechts, Denis Flandre, Jean-Pierre Raskin
Format:	Artigo
Idioma:	Inglês
Publicat:	National Institute of Telecommunications 2023-06-01
Col·lecció:	Journal of Telecommunications and Information Technology
Matèries:	charge-pumping electrical characterization interface traps SOI wafer bonding Si layer transfer
Accés en línia:	https://jtit.pl/jtit/article/view/831
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