Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation
Highlights Comprehensively review the material systems, device physics, and performance metrics of complementary metal-oxide-semiconductor-compatible hafnium-based ferroelectric (Hf-FEs), highlighting their potential for next-generation non-volatile memory. The review summarized the synaptic plastic...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
SpringerOpen
2026-04-01
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| Col·lecció: | Nano-Micro Letters |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1007/s40820-026-02158-z |
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