Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation

Highlights Comprehensively review the material systems, device physics, and performance metrics of complementary metal-oxide-semiconductor-compatible hafnium-based ferroelectric (Hf-FEs), highlighting their potential for next-generation non-volatile memory. The review summarized the synaptic plastic...

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Bibliografische Detailangaben

Hauptverfasser:	Xiangwei Chen, Zheng Wang, Jialin Meng, Tianyu Wang
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	SpringerOpen 2026-04-01
Schriftenreihe:	Nano-Micro Letters
Schlagworte:	Hafnium oxide Ferroelectric materials Neuromorphic computing Non-volatile memory
Online-Zugang:	https://doi.org/10.1007/s40820-026-02158-z
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