Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation

Highlights Comprehensively review the material systems, device physics, and performance metrics of complementary metal-oxide-semiconductor-compatible hafnium-based ferroelectric (Hf-FEs), highlighting their potential for next-generation non-volatile memory. The review summarized the synaptic plastic...

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Principais autores:	Xiangwei Chen, Zheng Wang, Jialin Meng, Tianyu Wang
Formato:	Artigo
Idioma:	Inglês
Publicado:	SpringerOpen 2026-04-01
Series:	Nano-Micro Letters
Assuntos:	Hafnium oxide Ferroelectric materials Neuromorphic computing Non-volatile memory
Acceso en liña:	https://doi.org/10.1007/s40820-026-02158-z
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