Enhanced Low-Damage Quantitative Hybrid Cyclic Etching for AlGaN/GaN Heteroepitaxy: Process Optimization and Device Performance Improvement

The etching process is pivotal in the fabrication of GaN-based devices, directly influencing their performance. This study presents an enhanced low-damage hybrid cyclic etching technology for AlGaN/GaN heteroepitaxy structures, combining oxygen plasma oxidation with HCl etching to achieve atomic-sca...

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Hlavní autoři:	Guiyu Shen, Yulong Fang, He Guan, Zeyuan Yu, Yongchuan Tang, Ying Wang
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	IEEE 2025-01-01
Edice:	IEEE Journal of the Electron Devices Society
Témata:	AlGaN/GaN heterogeneous epitaxy etching AlGaN/GaN HEMT hybrid cyclic etching ohmic contact
On-line přístup:	https://ieeexplore.ieee.org/document/11250627/
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