Demonstration of Threshold Switching and Bipolar Resistive Switching in Ag/SnO<i><sub>x</sub></i>/TiN Memory Device
In this work, we observed the duality of threshold switching and non-volatile memory switching of Ag/SnO<i><sub>x</sub></i>/TiN memory devices by controlling the compliance current (CC) or pulse amplitude. The insulator thickness and chemical analysis of the device stack were confirmed by transmissi...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2021-10-01
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| coleção: | Metals |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2075-4701/11/10/1605 |
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