Demonstration of Threshold Switching and Bipolar Resistive Switching in Ag/SnO<i><sub>x</sub></i>/TiN Memory Device
In this work, we observed the duality of threshold switching and non-volatile memory switching of Ag/SnO<i><sub>x</sub></i>/TiN memory devices by controlling the compliance current (CC) or pulse amplitude. The insulator thickness and chemical analysis of the device stack were confirmed by transmissi...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI AG
2021-10-01
|
| Schriftenreihe: | Metals |
| Schlagworte: | |
| Online-Zugang: | https://www.mdpi.com/2075-4701/11/10/1605 |
| Tags: |
Keine Tags, Fügen Sie das erste Tag hinzu!
|