An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications
This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2022-07-01
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| Col·lecció: | Energies |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/1996-1073/15/14/5244 |
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