All III‐arsenide low threshold InAs quantum dot lasers on InP(001)
Abstract This study investigates the development of InAs quantum dot (QD) lasers on a InP(001) substrate, utilizing only III‐arsenide layers. This approach avoids the issues associated with the use of phosphorus compounds, which are evident in the crystal growth of conventional C/L‐band QD lasers, m...
Tallennettuna:
| Päätekijät: | , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Wiley
2023-08-01
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| Sarja: | Electronics Letters |
| Aiheet: | |
| Linkit: | https://doi.org/10.1049/ell2.12920 |
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