Modeling Electronic and Optical Properties of InAs/InP Quantum Dots
A theoretical investigation of electronic properties of self-assembled InAs/InP quantum dots (QDs) is presented, utilizing a novel two-step modeling approach derived from a double-capping procedure following QD growth processes, a method pioneered in this study. The electronic band structure of the...
-д хадгалсан:
| Үндсэн зохиолчид: | , , |
|---|---|
| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
MDPI AG
2024-08-01
|
| Цуврал: | Photonics |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.mdpi.com/2304-6732/11/8/749 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
|