Modeling Electronic and Optical Properties of InAs/InP Quantum Dots
A theoretical investigation of electronic properties of self-assembled InAs/InP quantum dots (QDs) is presented, utilizing a novel two-step modeling approach derived from a double-capping procedure following QD growth processes, a method pioneered in this study. The electronic band structure of the...
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| Asıl Yazarlar: | , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
MDPI AG
2024-08-01
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| Seri Bilgileri: | Photonics |
| Konular: | |
| Online Erişim: | https://www.mdpi.com/2304-6732/11/8/749 |
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