Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO₂/InGaAs

By combining capacitance–voltage measurements, TCAD simulations, and X-ray photoelectron spectroscopy, the impact of the work function of the gate metals Ti, Mo, Pd, and Ni on the defects in bulk HfO₂ and at the HfO₂/InGaAs interfaces are studied. The oxidation at Ti/HfO<sub>2<...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Huy-Binh Do, Quang-Ho Luc, Phuong V. Pham, Anh-Vu Phan-Gia, Thanh-Son Nguyen, Hoang-Minh Le, Maria Merlyne De Souza
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2023-08-01
Цуврал:	Micromachines
Нөхцлүүд:	defects in HfO<sub>2</sub> interface traps border traps acceptor-like and donor-like traps Hf 4f peaks valence band maximum
Онлайн хандалт:	https://www.mdpi.com/2072-666X/14/8/1606
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!