Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO<sub>2</sub>/InGaAs
By combining capacitance–voltage measurements, TCAD simulations, and X-ray photoelectron spectroscopy, the impact of the work function of the gate metals Ti, Mo, Pd, and Ni on the defects in bulk HfO<sub>2</sub> and at the HfO<sub>2</sub>/InGaAs interfaces are studied. The oxidation at Ti/HfO<sub>2<...
I tiakina i:
| Ngā kaituhi matua: | , , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
MDPI AG
2023-08-01
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| Rangatū: | Micromachines |
| Ngā marau: | |
| Urunga tuihono: | https://www.mdpi.com/2072-666X/14/8/1606 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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