New Technology and Development Trend of Insulated Gate Bipolar Transistors
IGBT with fine-pattern trench gate, thin drift region, field stop as well as enhanced carrier doping concentration in emitter side is the mainstream device structure at present. Meanwhile, new device structures, package technology and material are studied to improve the device performance. In this p...
Gorde:
| Egile Nagusiak: | , , , , , |
|---|---|
| Formatua: | Artigo |
| Hizkuntza: | Chinês |
| Argitaratua: |
Editorial Office of Control and Information Technology
2017-01-01
|
| Saila: | Kongzhi Yu Xinxi Jishu |
| Gaiak: | |
| Sarrera elektronikoa: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.003 |
| Etiketak: |
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|