Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technol...
Na minha lista:
| Principais autores: | , , |
|---|---|
| 格式: | Artigo |
| 语言: | Inglês |
| 出版: |
Elsevier
2015-09-01
|
| 丛编: | Engineering |
| 主题: | |
| 在线阅读: | http://www.sciencedirect.com/science/article/pii/S2095809916300133 |
| 标签: |
没有标签, 成为第一个标记此记录!
|