Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technol...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Elsevier
2015-09-01
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| Edice: | Engineering |
| Témata: | |
| On-line přístup: | http://www.sciencedirect.com/science/article/pii/S2095809916300133 |
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