New Technology and Development Trend of Insulated Gate Bipolar Transistors
IGBT with fine-pattern trench gate, thin drift region, field stop as well as enhanced carrier doping concentration in emitter side is the mainstream device structure at present. Meanwhile, new device structures, package technology and material are studied to improve the device performance. In this p...
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| Үндсэн зохиолчид: | , , , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Chinês |
| Хэвлэсэн: |
Editorial Office of Control and Information Technology
2017-01-01
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| Цуврал: | Kongzhi Yu Xinxi Jishu |
| Нөхцлүүд: | |
| Онлайн хандалт: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.003 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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