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Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth par...

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Principais autores: Alexey D. Bolshakov, Alexey M. Mozharov, Georgiy A. Sapunov, Igor V. Shtrom, Nickolay V. Sibirev, Vladimir V. Fedorov, Evgeniy V. Ubyivovk, Maria Tchernycheva, George E. Cirlin, Ivan S. Mukhin
Formato: Artigo
Idioma:Inglês
Publicado em: Beilstein-Institut 2018-01-01
coleção:Beilstein Journal of Nanotechnology
Assuntos:
A3B5 on Si
epitaxy
GaN
MBE
nanowires
nanotubes
nanotube-like nanostructures
Si
Acesso em linha:https://doi.org/10.3762/bjnano.9.17
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